STMicroelectronics Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 44A; 110W; DPAK; ESD [STD13N60DM2]
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance Extremely high dv/dt ruggedness Zener-protected Applications Switching applications
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications