STD1NK60T4 N-Channel MOSFET, 1 A, 600 V MDmesh, SuperMESH, 3-Pin DPAK STMicroelectronics [STD1NK60T4]; 687-5181
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.0416666666666667 |
| Maximum Drain Source Voltage | 600 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 8.5 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.7V |
| Minimum Gate Threshold Voltage | 2.25V |
| Maximum Power Dissipation | 30 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Height | 2.4mm |
| Maximum Operating Temperature | +150 °C |
| Length | 6.6mm |
| Minimum Operating Temperature | -55 °C |
| Series | MDmesh, SuperMESH |
| Typical Gate Charge @ Vgs | 7 nC @ 10 V |
| Width | 6.2mm |
| Transistor Material | Si |