STMicroelectronics Transistor: P-MOSFET; unipolar; -60V; -25A; 70W; DPAK [STD35P6LLF6]
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The STMicroelectronics P-channel Power MOSFET, developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
The STMicroelectronics P-channel Power MOSFET, developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss