STMicroelectronics Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 2.3A; Idm: 16A [STD5N80K5]
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Industry's lowest RDS(on) x area Industry's best FoM (figure of merit) Ultra-low gate charge Zener-protected Applications Switching applications
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Industry's lowest RDS(on) x area
Industry's best FoM (figure of merit)
Ultra-low gate charge
Zener-protected
Applications
Switching applications