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STMICROELECTRONICSSTGYA120M65DF2Transistor: IGBT

Case MAX247Collector current 120ACollector-emitter voltage 650VFeatures of semiconductor devices integrated anti-parallel diode
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STGYA120M65DF2
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STGYA120M65DF2
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Transistor: IGBT; 650V; 120A; 625W; MAX247

THÔNG SỐ KỸ THUẬT
Manufacturer STMicroelectronics
Manufacturer Part No. STGYA120M65DF2
Type of transistor IGBT
Collector-emitter voltage 650V
Collector current 120A
Power dissipation 625W
Case MAX247
Gate-emitter voltage ±20V
Pulsed collector current 360A
Mounting THT
Gate charge 420nC
Kind of package tube
Features of semiconductor devices integrated anti-parallel diode
Gross weight 5 g

Tài liệu: Documentation EN · Documentation EN · Product family

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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