STH180N10F3-2 N-Channel MOSFET, 180 A, 100 V STripFET F3, 3-Pin H2PAK-2 STMicroelectronics [STH180N10F3-2]; 761-0500
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 180 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | H2PAK-2 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 315 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 114.6 nC @ 10 V |
| Height | 4.8mm |
| Maximum Operating Temperature | +175 °C |
| Length | 15.8mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Series | STripFET F3 |
| Width | 10.4mm |