STH3N150-2 N-Channel MOSFET, 2.5 A, 1500 V MDmesh, 3-Pin H2PAK-2 STMicroelectronics [STH3N150-2]; 103-2012
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 2.5 A |
| Maximum Drain Source Voltage | 1500 V |
| Package Type | H2PAK-2 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 9 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 140 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Series | MDmesh |
| Transistor Material | Si |
| Width | 15.8mm |
| Height | 4.8mm |
| Typical Gate Charge @ Vgs | 29.3 nC @ 10 V |
| Length | 10.4mm |
| Maximum Operating Temperature | +150 °C |