STH410N4F7-6AG N-Channel MOSFET, 200 A, 40 V STripFET F7, 6+Tab-Pin H2PAK STMicroelectronics [STH410N4F7-6AG]; 111-6467
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 200 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | H2PAK |
| Mounting Type | Surface Mount |
| Pin Count | 6 + Tab |
| Maximum Drain Source Resistance | 1.1 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 365 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Series | STripFET F7 |
| Minimum Operating Temperature | -55 °C |
| Width | 10.4mm |
| Height | 4.8mm |
| Typical Gate Charge @ Vgs | 141 nC @ 10 V |
| Transistor Material | Si |
| Forward Diode Voltage | 1.3V |
| Length | 8.9mm |
| Maximum Operating Temperature | +175 °C |