STMicroelectronics Transistor: N-MOSFET; unipolar; 40V; 167A; 111W; PowerFLAT 5x6 [STL170N4LF8]
The STMicroelectronics 40 V N channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure. It ensures a state of the art of figure of merit for very low on state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. MSL1 grade 175 °C maximum operating junction temperature 100 percent avalanche tested Low gate charge Qg
The STMicroelectronics 40 V N channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure. It ensures a state of the art of figure of merit for very low on state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.
MSL1 grade
175 °C maximum operating junction temperature
100 percent avalanche tested
Low gate charge Qg