STP18N60DM2 N-Channel MOSFET, 12 A, 600 V MDmesh DM2, 3-Pin TO-220 STMicroelectronics [STP18N60DM2]; 168-5891
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0 |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 290 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 90 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Series | MDmesh DM2 |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.6V |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Height | 15.75mm |
| Length | 10.4mm |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V |
| Width | 4.6mm |