STMicroelectronics 1200V 40A, Dual SiC Schottky Rectifier & Schottky Diode, 3-Pin TO-247 STPSC40G12WLY [STPSC40G12WLY]; 275-1369

The STMicroelectronics SiC diode is available in TO-247 and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.

No or negligible reverse recovery

Switching behaviour independent of temperature

Robust high voltage periphery