STU1HN60K3 N-Channel MOSFET, 1.2 A, 600 V MDmesh K3, SuperMESH3, 3-Pin IPAK STMicroelectronics [STU1HN60K3]; 791-7949
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1.2 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | IPAK (TO-251) |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 8 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 27 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Width | 2.4mm |
| Height | 6.2mm |
| Typical Gate Charge @ Vgs | 9.5 nC @ 10 V |
| Length | 6.6mm |
| Maximum Operating Temperature | +150 °C |
| Series | MDmesh K3, SuperMESH3 |
| Minimum Operating Temperature | -55 °C |