STW11NM80 N-Channel MOSFET, 11 A, 800 V MDmesh, 3-Pin TO-247 STMicroelectronics [STW11NM80]; 103-1986
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.458333333333333 |
| Maximum Drain Source Voltage | 800 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 400 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 150 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 43.6 nC @ 10 V |
| Series | MDmesh |
| Minimum Operating Temperature | -65 °C |
| Maximum Operating Temperature | +150 °C |
| Length | 15.75mm |
| Height | 20.15mm |
| Transistor Material | Si |
| Width | 5.15mm |