STMicroelectronics Transistor: N-MOSFET; unipolar; 600V; 12.6A; 192W; TO247 [STW20NM60]
The STMicroelectronics Power MOSFET associates the multiple drain process with the company's Power MESH horizontal layout. The resulting product has an outstanding low on resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
The STMicroelectronics Power MOSFET associates the multiple drain process with the company's Power MESH horizontal layout. The resulting product has an outstanding low on resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance