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STW48N60DM2 168-5901

STMicroelectronics Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 160A; 300W; TO247 [STW48N60DM2]

Mã nhà sản xuất
STW48N60DM2
Thương hiệu
STMICROELECTRONICS
Mã kho
111-6484
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

N-Channel MDmesh DM2 Series, STMicroelectronics The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies. High dV/dt capability for improved system reliability AEC-Q101 qualified MOSFET Transistors, STMicroelectronics

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

High dV/dt capability for improved system reliability

AEC-Q101 qualified

MOSFET Transistors, STMicroelectronics

THÔNG SỐ KỸ THUẬT
Manufacturer STMicroelectronics
Manufacturer Part No. STW48N60DM2
Channel Type N
Maximum Continuous Drain Current 40A
Maximum Drain Source Voltage 600V
Package Type TO-247
Series MDmesh DM2
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 79mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 5V
Minimum Gate Threshold Voltage 3V
Maximum Power Dissipation 300W
Transistor Configuration Single
Maximum Gate Source Voltage -25 V, +25 V
Number of Elements per Chip 1
Width 5.15mm
Transistor Material Si
Maximum Operating Temperature +150°C
Typical Gate Charge @ Vgs 70 nC @ 10 V
Length 15.75mm
Minimum Operating Temperature -55°C
Height 20.15mm
Forward Diode Voltage 1.6V

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