STW56N60M2 N-Channel MOSFET, 52 A, 650 V MDmesh M2, 3-Pin TO-247 STMicroelectronics [STW56N60M2]; 876-5720
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 52 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 55 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 350 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Width | 5.15mm |
| Height | 20.15mm |
| Series | MDmesh M2 |
| Typical Gate Charge @ Vgs | 91 nC @ 10 V |
| Length | 15.75mm |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 1.6V |
| Transistor Material | Si |