STMicroelectronics Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 12A; 130W; TO247 [STW8N120K5]
The STMicroelectronics Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for applications requiring superior power density and high efficiency. Industry's lowest RDS(on) x area Industry's best FoM Ultra low gate charge 100% avalanche tested Zener protected
The STMicroelectronics Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for applications requiring superior power density and high efficiency.
Industry's lowest RDS(on) x area
Industry's best FoM
Ultra low gate charge
100% avalanche tested
Zener protected