STB46N60M6, MOSFET [STWA75N60DM6]; 195-2679
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 72 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 36 mO |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.75V |
| Minimum Gate Threshold Voltage | 3.25V |
| Maximum Power Dissipation | 446 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±25 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.6V |
| Maximum Operating Temperature | +150 °C |
| Length | 15.9mm |
| Typical Gate Charge @ Vgs | 117 @ 10 V nC |
| Height | 21.1mm |
| Width | 5.1mm |