STMicroelectronics IC: driver; H-bridge; IGBT gate driver,MOSFET gate driver; SO16 [TD310ID]
MOSFET & IGBT Drivers, STMicroelectronics The TD310 is designed to drive one, two or three Power IGBT/MOS and has driving capability for pulse transformer. So it is perfectly suited to interface control IC with Power Switches in low side or half-bridge configuration. TD310 includes a current sense comparator which inhibit the output drivers in case of overcurrent. An alarm output signals the even to a controller. TD310 also includes an uncommitted op-amp which can be used for current measurement (as an amplifier before the A/D input of a microcontroller) of for other general purpose. Programmable undervoltage lockout and standby mode make TD310 suitable for a large area of environment and application. Typical applications are low side IGBT and power MOSFET drive in three phase systems, pulse transformer drive, and general purpose pulse drive. STAND-BY MODE ADJUSTABLE UNDERVOLTAGE LOCKOUT LEVEL CHANNEL PARALLELING CAPABILITY 4V TO 16V SINGLE SUPPLY OPERATION CMOS/LSTTL COMPATIBLE INVERTING INPUT WITH HYSTERESIS THREE POWER IGBT/MOS AND PULSE TRANSFORMER DRIVERS UNCOMMITTED OP-AMP CURRENT SENSE COMPARATOR LOW OUTPUT IMPEDANCE TYP: 7Ω AT 200mA LOW BIAS CURRENT TYP: 1.5mA 0.6 A PER CHANNEL PEAK OUTPUT CURRENT CAPABILITY MOSFET & IGBT Drivers, STMicroelectronics
MOSFET & IGBT Drivers, STMicroelectronics
The TD310 is designed to drive one, two or three Power IGBT/MOS and has driving capability for pulse transformer. So it is perfectly suited to interface control IC with Power Switches in low side or half-bridge configuration. TD310 includes a current sense comparator which inhibit the output drivers in case of overcurrent. An alarm output signals the even to a controller. TD310 also includes an uncommitted op-amp which can be used for current measurement (as an amplifier before the A/D input of a microcontroller) of for other general purpose. Programmable undervoltage lockout and standby mode make TD310 suitable for a large area of environment and application. Typical applications are low side IGBT and power MOSFET drive in three phase systems, pulse transformer drive, and general purpose pulse drive.
STAND-BY MODE
ADJUSTABLE UNDERVOLTAGE LOCKOUT LEVEL
CHANNEL PARALLELING CAPABILITY
4V TO 16V SINGLE SUPPLY OPERATION
CMOS/LSTTL COMPATIBLE INVERTING INPUT WITH HYSTERESIS
THREE POWER IGBT/MOS AND PULSE TRANSFORMER DRIVERS
UNCOMMITTED OP-AMP
CURRENT SENSE COMPARATOR
LOW OUTPUT IMPEDANCE TYP: 7Ω AT 200mA
LOW BIAS CURRENT TYP: 1.5mA
0.6 A PER CHANNEL PEAK OUTPUT CURRENT CAPABILITY
MOSFET & IGBT Drivers, STMicroelectronics