VNS1NV04DP-E Dual N-Channel MOSFET, 3.5 A, 40 V OMNIFET, 8-Pin SOIC STMicroelectronics [VNS1NV04DP-E]; 917-2797
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 3.5 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 500 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 0.5V |
| Maximum Power Dissipation | 4 W |
| Transistor Configuration | Isolated |
| Number of Elements per Chip | 2 |
| Forward Diode Voltage | 0.8V |
| Series | OMNIFET |
| Transistor Material | Si |
| Height | 1.5mm |
| Typical Gate Charge @ Vgs | 5 nC @ 5 V |
| Length | 5mm |
| Width | 4mm |