TSM3N80CH C5G N-Channel MOSFET, 3 A, 800 V, 3-Pin IPAK Taiwan Semi [TSM3N80CH C5G]; 171-3709
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.125 |
| Maximum Drain Source Voltage | 800 V |
| Package Type | TO-251 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4.2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 94 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Width | 2.3mm |
| Forward Diode Voltage | 1.5V |
| Length | 6.5mm |
| Height | 7mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |