TSM4N80CI C0G N-Channel MOSFET, 4 A, 800 V, 3-Pin ITO-220 Taiwan Semi [TSM4N80CI C0G]; 171-3625
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.166666666666667 |
| Maximum Drain Source Voltage | 800 V |
| Package Type | ITO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 3 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 38.7 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Width | 4.6mm |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V |
| Height | 15mm |
| Length | 10mm |
| Forward Diode Voltage | 1.5V |
| Maximum Operating Temperature | +150 °C |