TSM60NB1R4CP ROG N-Channel MOSFET, 3.3 A, 600 V, 3 + Tab-Pin DPAK Taiwan Semi [TSM60NB1R4CP ROG]; 171-3657
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 3.3 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-252 |
| Mounting Type | Surface Mount |
| Pin Count | 3 + Tab |
| Maximum Drain Source Resistance | 1.4 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 38 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Width | 5.8mm |
| Minimum Operating Temperature | -55 °C |
| Height | 2.3mm |
| Maximum Operating Temperature | +150 °C |
| Length | 6.5mm |
| Typical Gate Charge @ Vgs | 7.7 nC @ 10 V |
| Forward Diode Voltage | 1.4V |