CSD16321Q5 N-Channel MOSFET, 100 A, 25 V NexFET, 8-Pin SON Texas Instruments [CSD16321Q5]; 162-8526
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 25 V |
| Package Type | SON |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 3.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.4V |
| Minimum Gate Threshold Voltage | 0.9V |
| Maximum Power Dissipation | 3.1 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, +10 V |
| Number of Elements per Chip | 1 |
| Width | 5.1mm |
| Typical Gate Charge @ Vgs | 14 nC @ 4.5 V |
| Height | 1.05mm |
| Series | NexFET |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Length | 6.1mm |
| Minimum Operating Temperature | -55 °C |