CSD19536KCS N-Channel MOSFET, 259 A, 100 V NexFET, 3-Pin TO-220 Texas Instruments [CSD19536KCS]; 827-4919
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 259 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 3.2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.2V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 4.7mm |
| Series | NexFET |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 118 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Length | 10.67mm |
| Height | 16.51mm |