CSD25304W1015T P-Channel MOSFET, 3 A, 20 V NexFET, 6-Pin DSBGA Texas Instruments [CSD25304W1015T]; 162-9740
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 0.125 |
| Maximum Drain Source Voltage | 20 V |
| Package Type | DSBGA |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 92 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.15V |
| Minimum Gate Threshold Voltage | 0.55V |
| Maximum Power Dissipation | 750 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Forward Diode Voltage | 1V |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Series | NexFET |
| Typical Gate Charge @ Vgs | 3.3 nC @ 4.5 V |
| Minimum Operating Temperature | -55 °C |
| Width | 1.5mm |
| Length | 1mm |