2SK3669(Q) N-Channel MOSFET, 10 A, 100 V 2SK, 3-Pin PW Mold Toshiba [2SK3669(Q)]; 601-2116
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.416666666666667 |
| Maximum Drain Source Voltage | 100 V |
| Package Type | PW Mold |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 125 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 20 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Series | 2SK |
| Height | 2.3mm |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 8 nC @ 10 V |
| Length | 6.5mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Width | 5.5mm |