Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3PN [GT40WR21,Q(O]; 799-4864
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Maximum Continuous Collector Current | 40 A |
| Maximum Collector Emitter Voltage | 1800 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 375 W |
| Package Type | TO-3PN |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Length | 15.5mm |
| Width | 4.5mm |
| Height | 20mm |
| Dimensions | 15.5 x 4.5 x 20mm |
| Maximum Operating Temperature | +175 °C |