Toshiba, RN1106(F) NPN Digital Transistor, 100 mA 50 V 4.7 kΩ, Ratio Of 0.1, 3-Pin ESM [RN1106(F)]; 540-6554
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Transistor Type | NPN |
| Number of Elements per Chip | 1 |
| Maximum Continuous Collector Current | 100 mA |
| Maximum Collector Emitter Voltage | 50 V |
| Typical Input Resistor | 4.7 kΩ |
| Mounting Type | Surface Mount |
| Package Type | ESM |
| Pin Count | 3 |
| Minimum DC Current Gain | 80 |
| Transistor Configuration | Single |
| Maximum Collector Emitter Saturation Voltage | 0.3 V |
| Maximum Emitter Base Voltage | 5 V |
| Typical Resistor Ratio | 0.1 |
| Minimum Operating Temperature | -55 °C |
| Dimensions | 1.6 x 0.8 x 0.7mm |
| Width | 0.8mm |
| Height | 0.7mm |
| Length | 1.6mm |
| Maximum Operating Temperature | +150 °C |