TK11P65W,RQ(S N-Channel MOSFET, 11.1 A, 650 V DTMOSIV, 3-Pin DPAK Toshiba [TK11P65W,RQ(S]; 133-2796
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 11.1 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 440 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 100 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Series | DTMOSIV |
| Width | 6.1mm |
| Length | 6.6mm |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V |
| Height | 2.3mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 1.7V |