TK12A60W,S5VX(J N-Channel MOSFET, 11.5 A, 600 V TK, 3-Pin TO-220SIS Toshiba [TK12A60W,S5VX(J]; 891-2879
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 11.5 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-220SIS |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 300 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.7V |
| Maximum Power Dissipation | 35 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Length | 10mm |
| Maximum Operating Temperature | +150 °C |
| Height | 15mm |
| Width | 4.5mm |
| Forward Diode Voltage | 1.7V |
| Series | TK |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V |
| Transistor Material | Si |