TK14G65W,RQ(S N-Channel MOSFET, 13.7 A, 650 V DTMOSIV, 3-Pin D2PAK Toshiba [TK14G65W,RQ(S]; 133-2797
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 13.7 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 250 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 130 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 1.7V |
| Series | DTMOSIV |
| Width | 8.8mm |
| Length | 10.35mm |
| Typical Gate Charge @ Vgs | 35 nC @ 10 V |
| Height | 4.46mm |