TK16E60W5,S1VX(S N-Channel MOSFET, 15.8 A, 600 V DTMOSIV, 3-Pin TO-220 Toshiba [TK16E60W5,S1VX(S]; 125-0541
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 15.8 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 230 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 130 W |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Length | 10.16mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 1.7V |
| Height | 15.1mm |
| Width | 4.45mm |
| Series | DTMOSIV |
| Typical Gate Charge @ Vgs | 43 nC @ 10 V |