TK16V60W N-Channel MOSFET, 15.8 A, 600 V, 5-Pin DFN Toshiba [TK16V60W]; 171-2512
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 15.8 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | DFN |
| Mounting Type | Surface Mount |
| Pin Count | 5 |
| Maximum Drain Source Resistance | 190 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.7V |
| Minimum Gate Threshold Voltage | 2.7V |
| Maximum Power Dissipation | 139 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Height | 0.85mm |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V |
| Length | 8mm |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 1.7V |
| Width | 8mm |