TK20J60W5,S1VQ(O N-Channel MOSFET, 20 A, 600 V DTMOSIV, 3+Tab-Pin TO-3P Toshiba [TK20J60W5,S1VQ(O]; 125-0550
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-3P |
| Mounting Type | Through Hole |
| Pin Count | 3 + Tab |
| Maximum Drain Source Resistance | 175 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 165 W |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Height | 20mm |
| Width | 4.5mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Length | 15.5mm |
| Typical Gate Charge @ Vgs | 55 nC @ 10 V |
| Series | DTMOSIV |
| Forward Diode Voltage | 1.7V |