TK25E60X5,S1X(S N-Channel MOSFET, 25 A, 600 V DTMOSIV, 3-Pin TO-220 Toshiba [TK25E60X5,S1X(S]; 125-0556
Original price
0₫
-
Original price
0₫
Original price
0₫
0₫
-
0₫
Current price
0₫
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 25 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 140 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 180 W |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Width | 4.45mm |
| Series | DTMOSIV |
| Height | 15.1mm |
| Typical Gate Charge @ Vgs | 60 nC @ 10 V |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 1.7V |
| Length | 10.16mm |