TK28N65W,S1F(S N-Channel MOSFET, 27 A, 650 V DTMOSIV, 3-Pin TO-247 Toshiba [TK28N65W,S1F(S]; 799-5084
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 27 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 110 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Power Dissipation | 220 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Length | 15.94mm |
| Typical Gate Charge @ Vgs | 75 nC @ 10 V |
| Series | DTMOSIV |
| Transistor Material | Si |
| Height | 20.95mm |
| Width | 5.02mm |