TK30J25D,S1F(O N-Channel MOSFET, 30 A, 250 V, 3-Pin TO-3PN Toshiba [TK30J25D,S1F(O]; 144-5214
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 250 V |
| Package Type | TO-3PN |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 60 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 260 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | +20 V |
| Number of Elements per Chip | 1 |
| Height | 20mm |
| Width | 4.5mm |
| Forward Diode Voltage | 1.7V |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Length | 15.5mm |
| Typical Gate Charge @ Vgs | 100 @ 10 V nC |