TK31V60W5 N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN Toshiba [TK31V60W5]; 171-2421
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30.8 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | DFN |
| Mounting Type | Surface Mount |
| Pin Count | 5 |
| Maximum Drain Source Resistance | 109 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 240 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Width | 8mm |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 1.7V |
| Typical Gate Charge @ Vgs | 105 nC @ 10 V |
| Length | 8mm |
| Height | 0.85mm |