TK56E12N1,S1X(S N-Channel MOSFET, 112 A, 120 V U-MOSVIII-H, 3-Pin TO-220 Toshiba [TK56E12N1,S1X(S]; 125-0578
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 112 A |
| Maximum Drain Source Voltage | 120 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 7 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 168 W |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 4.45mm |
| Series | U-MOSVIII-H |
| Height | 15.1mm |
| Length | 10.16mm |
| Forward Diode Voltage | 1.2V |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 69 nC @ 10 V |