TK62N60X,S1F(S N-Channel MOSFET, 61.8 A, 600 V DTMOSIV-H, 3-Pin TO-247 Toshiba [TK62N60X,S1F(S]; 125-0586
Original price
0₫
-
Original price
0₫
Original price
0₫
0₫
-
0₫
Current price
0₫
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 61.8 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 40 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 400 W |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Series | DTMOSIV-H |
| Width | 5.02mm |
| Height | 20.95mm |
| Typical Gate Charge @ Vgs | 135 nC @ 10 V |
| Length | 15.94mm |
| Transistor Material | Si |
| Forward Diode Voltage | 1.7V |
| Maximum Operating Temperature | +150 °C |