TK65G10N1 N-Channel MOSFET, 136 A, 100 V, 3-Pin D2PAK Toshiba [TK65G10N1]; 171-2487
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 136 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | D2PAK |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 156 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Forward Diode Voltage | 1.2V |
| Maximum Operating Temperature | +150 °C |
| Width | 10.27mm |
| Length | 10.35mm |
| Typical Gate Charge @ Vgs | 81 nC @ 10 V |
| Height | 4.46mm |