TK9J90E N-Channel MOSFET, 9 A, 900 V TK, 3-Pin TO-3PN Toshiba [TK9J90E]; 796-5153
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.375 |
| Maximum Drain Source Voltage | 900 V |
| Package Type | TO-3PN |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.3 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation | 250 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Series | TK |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 46 nC @ 10 V |
| Length | 15.5mm |
| Height | 20mm |
| Width | 4.5mm |