TPC8118(TE12L,Q) P-Channel MOSFET, 13 A, 30 V, 8-Pin Toshiba [TPC8118(TE12L,Q)]; 582-476
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 13 A |
| Maximum Drain Source Voltage | 30 V |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 7 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 1.9 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Height | 1.5mm |
| Typical Gate Charge @ Vgs | 56 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |