TPN22006NH,LQ(S N-Channel MOSFET, 21 A, 60 V U-MOSVIII-H, 8-Pin TSON Toshiba [TPN22006NH,LQ(S]; 133-2813
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 21 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | TSON |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 64 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 18 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Series | U-MOSVIII-H |
| Width | 3.1mm |
| Height | 0.85mm |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V |
| Length | 3.1mm |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 1.2V |