IRF830ASPBF N-Channel MOSFET, 5 A, 500 V, 3-Pin D2PAK Vishay [IRF830ASPBF]; 650-4110
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.208333333333333 |
| Maximum Drain Source Voltage | 500 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.4 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 3.1 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Length | 10.67mm |
| Maximum Operating Temperature | +150 °C |
| Height | 4.83mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 24 nC @ 10 V |
| Width | 9.65mm |
| Minimum Operating Temperature | -55 °C |