IRFBE20PBF N-Channel MOSFET, 1.8 A, 800 V, 3-Pin TO-220AB Vishay [IRFBE20PBF]; 542-9535
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1.8 A |
| Maximum Drain Source Voltage | 800 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 6.5 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 54 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Height | 9.01mm |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V |
| Transistor Material | Si |
| Width | 4.7mm |
| Maximum Operating Temperature | +150 °C |
| Length | 10.41mm |
| Minimum Operating Temperature | -55 °C |