IRFD110PBF N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay [IRFD110PBF]; 919-4498
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.0416666666666667 |
| Maximum Drain Source Voltage | 100 V |
| Package Type | HVMDIP |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 540 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 1.3 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 8.3 nC @ 10 V |
| Width | 6.29mm |
| Length | 5mm |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 3.37mm |