IRFD210PBF N-Channel MOSFET, 600 mA, 200 V, 4-Pin HVMDIP Vishay [IRFD210PBF]; 541-0531
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 600 mA |
| Maximum Drain Source Voltage | 200 V |
| Package Type | HVMDIP |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 1.5 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 1 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 8.2 nC @ 10 V |
| Height | 3.37mm |
| Maximum Operating Temperature | +150 °C |
| Length | 5mm |
| Width | 6.29mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |