SI1062X-T1-GE3 N-Channel MOSFET, 530 mA, 20 V, 3-Pin SOT-523 Vishay [SI1062X-T1-GE3]; 165-6925
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 530 mA |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOT-523 (SC-89) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 762 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 220 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Height | 0.8mm |
| Width | 0.95mm |
| Length | 1.7mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 1.8 nC @ 8 V |